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Samsung launches new 512 GB eUFS memory chips for mobile devices

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Samsung 512GB eUFS

Despite the increased number of layers, it still have the same size as the company's previous 48-layer V-NAND 256GB solution.

Samsung said on Tuesday that it's now mass-producing 512GB flash storage chips that will enable smartphone makers to launch new smartphones that provide users with extra space for movies, music and apps. Now, Samsung Electronics has announced that it has begun mass production of the industry's first 512GB embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Today's handsets are capable of shooting 4K resolution videos, taking detailed photos, and playing increasingly larger and more complex games.

"The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones", said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. This year, flagships have moved to the UFS 2.1 standard which brings even higher storage performance.

Samsung's also announced that it "intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production".

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According to Samsung, users can save 130 files of 10-minute Ultra HD videos with the new chip, which is a significant development from 13 videos allowed by a 64 GB eUFS adopted on existing smartphones.

It is likely (though not confirmed) we could see this utilized in Samsung's forthcoming Galaxy S9 phones.

Samsung also injected its 512GB eUFS solution with a new of proprietary technologies, including an advanced circuit design and new power management technology in the controller to minimize energy consumption. The company says that kind of transfer speed is more than eight times faster than a typical microSD card is capable of. Some might find the lack of a removal storage option restrictive, but the eUFS standard has the benefit of being a lot faster, offering sequential read and write speeds of 860 MB/s and 255 MB/s, respectively.

Our take: 512GB of UFS storage seems like a dream, but the question is: will OEMs release devices with such an incredibly high amount of internal storage?

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